transistor bc635
NPN -55°C~150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole. EMITTERFEATURES High current transistors 2.0 Vdc Collector Current BC635_BC640Rev_5 180712E TO-92 Leaded Plastic Package All Dimensions are in mm 5º Continental Device India Limited Data Sheet TO-92 Page 3 of 5 Plastic Package 2N5551 For Lead Free Parts, Device Part # will be Prefixed with "T" TO-92 Plastic Package SILICON PLANAR EPITAXIAL TRANSISTORS Base BC635, 637, 639 NPN BC636, 638, 640 PNP NPN Silicon Epitaxial Planar Transistor NXP Semiconductors: BC635: 160Kb / 15P: 45 V, 1 A NPN medium power transistors Rev.1 Features: • High performance, low frequency devices typically with current ratings 1A up to 1W power … : BC635 : BC637: BC639 45 60 100 V V V VCES Collector-Emitter Voltage : BC635: BC637: BC639 45 60 100 V V V VCEO Collector-Emitter Voltage : BC635: BC637: BC639 45 60 … SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless … Part #: BC635. BC635 High Current Transistors . EMITTERFEATURES High current transistors 2. • NPN silicon planar epitaxial transistors. Status. Add to cart. COLLECTOR 3. • High current (max.pdf. Description: High Current Transistors. 1 A) • Low voltage (max. Complementary NPN transistor. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 150 K/W SYMBOL PARAMETER … BC637 NPN Transistor: Circuit, Pinout, and Datasheet.1 Features: • High performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. EMITTERFEATURES High current transistors 2. COLLECTOR 3. Please confirm your currency selection: Suppose I have this BC635 transistor, if I look at hFE then I'd say that the lowest value is 25 from that table in the Electrical Characteristics category, but if I look at the Figure 3. All Transistors. NPN Silicon Transistor. Co-Browse. COLLECTOR 3. Replacement and Equivalent for BC636 transistor. 1226. Manufacturer: ON Semiconductor. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor … Buy BC635 - Multicomp Pro - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 1 A, 800 mW, TO-92, Through Hole.7. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid … BC635 STMicroelectronics Bipolar Transistors - BJT NPN Sm Load Switch datasheet, inventory, & pricing. COLLECTOR 3. Stock. COLLECTOR 3. COLLECTOR 3. Page: 4 Pages.pdf. CHARACTERISTICS Tj =25°C unless otherwise specified. Buy BC635 - Nexperia - Bipolar (BJT) Single Transistor, NPN, 45 V, 1 A, 1 W, TO-92, Through Hole. Definition Advance Information SWITCHING AND AMPLIFIER APPLICATIONS · Complement to BC635/638/640 TO-92 ABSOLUTE MAXIMUM A=25 RATINGS (T °C) Characteristic SymbolRatingUnit Collector Emitter BC635 at BE =1Kohm R VCER 45 : BC637 60 BC639 100 V : V V Collector Emitter BC635 VCES 45 BC637 60 BC639 100 V : V V Availability Stock: Not Available Possible Replacement No Image Mfr. 07-4 June 2007: BC635-16 43Kb / 8P: NPN medium power transistors 1999 Apr 23: BC635-16 152Kb / 15P: 45 V, 1 A NPN medium power transistors Rev Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 bc635 bc637 bc639.32 5. Function: High Current Transistor. Contact Mouser (Tel-Aviv) +972 9 7783020 | Feedback.0002. TRANS NPN 45V 1A TO92-3. SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE BC636 TO-92 Bulk TO-92 … JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. C63516 = BC635 Transistor (45V, 1A) NPN quantity. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid … BC635/637/639 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted • PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at R BE=1KΩ : BC635 : BC637: BC639 45 60 100 V V V VCES Collector-Emitter Voltage : … BC635/D BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BC635 BC637 BC639 VCEO 45 60 80 Vdc Collector - Base Voltage BC635 BC637 BC639 VCBO 45 60 80 Vdc Emitter - Base Voltage VEBO 5.pdf.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistorsProduct specification 2001 Oct 10Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. Throughout its history, Motorola was known for its innovation in the field of … Details, datasheet, quote on part number: BC635. 80 V). BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid … BC636-16 Transistor Datasheet pdf, BC636-16 Equivalent. BC636-6 Transistor Datasheet pdf, BC636-6 Equivalent. NPN medium power transistors BC635; BC637; BC639 FEATURES •High current (max. Parameters and Characteristics. Description: Bipolar Transistors - BJT TO-92 NPN GP AMP.SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE BC636 TO-92 Bulk TO-92 Ammopack. Figure 1. EMITTERFEATURES High current transistors 2. MAX. DESCRIPTION. COLLECTOR 3. Mfr Part # Description.1 Features: • High performance, low frequency devices typically with current ratings 1A up to 1W power dissipation., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. Add to Wishlist Remove from bc635 bc637 bc639. BC635/D BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BC635 BC637 BC639 VCEO 45 60 80 Vdc Collector - Base Voltage BC635 BC637 BC639 VCBO 45 60 80 Vdc Emitter - Base Voltage VEBO 5. 3,023 views. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 150 K/W SYMBOL PARAMETER CONDITIONS MIN. Cyrus. Image and pinouts : Description. JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. PNP complements: BC636, BC638 and BC640. COLLECTOR 3. EMITTERFEATURES High current transistors 2., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. Transistor BC636 Features • Switching and Amplifier Applications • Complement to BC635 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Emitter Voltage at RBE = 1 k VCER −45 V Collector−Emitter BC635 datasheet, BC635 pdf, BC635 data sheet, datasheet, data sheet, pdf, Continental Device India Limited, 0. Download. Transistor mounted on an FR4 printed-circuit board. EMITTERFEATURES High current transistors 2. Download Product Compliance Certificate. APPLICATIONS. 1 A) •Low voltage (max.0 Vdc Collector Current Description: Bipolar Transistors - BJT NPN Sm Load Switch Complete Your Design Lifecycle: Obsolete ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.'s Part #: BC635. Product Compliance Certificate Download Product Compliance Certificate.2. BC635/D BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value … BC635 onsemi Transistors parts available at DigiKey. 8-21 October 2011: BCX54: 160Kb / 15P: 45 V, 1 bc635 bc637 bc639. C63516 = BC635 Transistor (45V, 1A) NPN.1 base2 C63516 = BC635 Transistor (45V, 1A) NPN. Add to Wishlist Remove from Wishlist. M3D186. FEATURES. Motorola, Inc. Parameters and Characteristics., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1.5A or 500mA and some manufacturers are also making it with 1A max … BC635: 116Kb / 4P: High Current Transistors Nanjing International G BC635: 54Kb / 3P: NPN Silicon Epitaxial Planar Transistor NXP Semiconductors: BC635: 43Kb / 8P: NPN medium power transistors 1999 Apr 23: Jiangsu Changjiang Elec BC635: 869Kb / 5P: TO-92 Plastic-Encapsulate Transistors. 8-21 October 2011: BC635: 160Kb / 15P: 45 V, 1 A NPN medium power transistors Rev. Max. Skip to Main Content +972 9 7783020. Base-Emitter Saturation Voltage from where I get the beta characteristic, on the right side of the plot beta is 10. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor … BC636-10 Transistor Datasheet pdf, BC636-10 Equivalent. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid dot=Green molding compound device, if none,the normal BC635_BC640Rev_5 180712E TO-92 Leaded Plastic Package All Dimensions are in mm 5º Continental Device India Limited Data Sheet TO-92 Page 3 of 5 Plastic Package 2N5551 For Lead Free Parts, Device Part # will be Prefixed with "T" TO-92 Plastic Package SILICON PLANAR EPITAXIAL TRANSISTORS Base BC635, 637, 639 NPN BC636, 638, 640 PNP NPN Silicon Epitaxial Planar Transistor NXP Semiconductors: BC635: 160Kb / 15P: 45 V, 1 A NPN medium power transistors Rev. Descriptions of onsemi BC635 provided by its distributors. This article mainly introduces Circuit, Pinout, Datasheet and other detailed information about ON … JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. Candy. Now I only learned about the beta characteristic in … BC635 Datasheet, BC635 NPN High Current Transistor Datasheet, buy BC635 Transistor. element14 Australia offers special pricing, same day dispatch, fast delivery, wide inventory, datasheets & technical support. 07 — 4 June 2007 Product data sheet Table 1., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1.Details, datasheet, quote on part number: BC635. Skip to Main Content (800) 346-6873. FEATURES. EGP 1. BC636-16ZL1 Transistor Silicon Plastic PNP , Package: TO-92 (TO-226), Pins=3. 1 A) • Low voltage (max. It can be used for many general purpose switching and amplification purposes. It was headquartered in Schaumburg, Illinois and was one of the largest providers of mobile phones, telecommunication equipment, and semiconductors. Base-Emitter Saturation Voltage from where I get the beta characteristic, on the right side of the plot beta is 10. • High current (max., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. Suppose I have this BC635 transistor, if I look at hFE then I'd say that the lowest value is 25 from that table in the Electrical Characteristics category, but if I look at the Figure 3. EMITTERFEATURES High current transistors 2. Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 ComSIT Distribution GmbH JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. Compare Product Add To Project | Add Notes Availability Stock: Not Available FEATURED PRODUCTS STMICROELECTRONICS BC635 BC637 BC639 PD TA 25°C PD TC 25°C SOA = 1S PD TC 25°C PD TA 25°C 500 200 100 50 20 1 3 5 10 30 50 100 300 500 1000 IC, COLLECTOR CURRENT (mA) Figure 2. In Stock. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid … JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. Absolute maximum ratings ( Ta=25°C ) 1. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid … BC635 Product details., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. Halfin. Change Location English INR ₹ INR $ USD India. Farnell UK offers fast quotes, same day dispatch, fast delivery, wide inventory, datasheets & technical support. Collector 3. BC635/637/639 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted • PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at R BE=1KΩ : BC635 : BC637: BC639 45 60 100 V V V VCES Collector-Emitter Voltage : BC635 The BC635 is a NPN silicon planar epitaxial medium power Bipolar Transistor with high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation.pdf Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION BC635 Medium Power Bipolar Transistors Page <1> 13/05/08 V1. Parameters and Characteristics. Weight (kg): . COLLECTOR 3., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. Octopart is the world's source for BC635 availability, pricing, and technical specs and other electronic parts. 07-4 June 2007: BC635-16 43Kb / 8P: NPN medium power transistors 1999 Apr 23: BC635-16 152Kb / 15P: 45 V, 1 A NPN medium power transistors Rev Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 bc635 bc637 bc639. Add to cart. BC635 NPN High Current Transistor is designed for the Driver stages of audio/video amplifiers. Base • PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25°C unless otherwise noted BC635/D BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BC635 BC637 BC639 VCEO 45 60 80 Vdc Collector - Base Voltage BC635 BC637 BC639 VCBO 45 60 80 Vdc Emitter - Base Voltage VEBO 5. EMITTERFEATURES High current transistors 2. 21 April 2022. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid … BC635 STMicroelectronics Bipolar Transistors - BJT NPN Sm Load Switch datasheet, inventory & pricing. EMITTERFEATURES High current transistors 2. DC Current Gain VCE = 2 V 500 300 100 50 20 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 3. Bipolar Transistors - BJT TO-92 PNP GP AMP. Collector to Emitter Voltage: Vceo = 45 Vdc 3. APPLICATIONS •Driver stages of audio/video amplifiers. #: BC636TA Description: Bipolar Transistors - BJT TO-92 PNP GP AMP BC635/637/639 NPN Epitaxial Silicon Transistor BC635/637/639 Switching and Amplifier Applications Complement to BC636/638/640 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted TO-92 Emitter 2. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor … Here is an image showing the pin diagram of this transistor. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC635[2] SOT54 SC-43A TO-92 BC636 BCP54 SOT223 SC-73 - BCP51 BCX54 SOT89 SC-62 TO-243 BCX51 Table 2. In Stock. onsemi / Fairchild. 07-4 June 2007: BC635: 160Kb / 15P: 45 V, 1 A NPN medium power transistors Rev.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistorsProduct specification 2001 Oct 10Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. COLLECTOR 3. DESCRIPTION. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid … Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. Current−Gain — Bandwidth Product VCE = 2 V 1 0. Learn more about ECAD Model., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. The BC639 is an NPN BJT transistor featuring a planar construction and manufactured in the TO-92 package.COLLECTOR 3. EMITTERFEATURES High current transistors 2. UNIT bc635 bc637 bc639. EMITTERFEATURES High current transistors 2. COLLECTOR 3. EMITTERFEATURES High current transistors 2. BC636 General Purpose Transistor Pnp, Package: TO-92 (TO-226), Pins=3. EMITTERFEATURES High current transistors 2., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. EMITTERFEATURES High current transistors 2. 45V Vceo, 1., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. Add to Wishlist Remove from bc635 bc637 bc639. Discrete Semiconductor Products | Single Bipolar Transistors. 959. DC Current Gain VCE = 2 V 500 300 100 50 20 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 3. ×.50. Here is an … BC635 BC637 BC639 PD TA 25°C PD TC 25°C SOA = 1S PD TC 25°C PD TA 25°C 500 200 100 50 20 1 3 5 10 30 50 100 300 500 1000 IC, COLLECTOR CURRENT (mA) Figure 2. Size:47K philips bc635 bc637 bc639. JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. Base-Emitter Saturation Voltage from where I get the beta characteristic, on the right side of the plot beta is 10. BC638-16 Datasheet. EMITTERFEATURES High current transistors 2. • Driver stages of audio/video amplifiers., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. EMITTERFEATURES High current transistors 2. BC640-10 Datasheet. 156°C/W Junction-to-ambient in free air thermal resistance. • NPN silicon planar epitaxial transistors. DISCRETE SEMICONDUCTORS. BC635 onsemi Transistors parts available at DigiKey., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1.pdf.: onsemi / Fairchild Mfr., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1.Download. JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.2 0 1 10 100 1000 IC BC635 onsemi | Transistors 0 Product Index BC635 onsemi Share BC635 onsemi Discrete Semiconductor Products | Single Bipolar Transistors Descriptions of onsemi BC635 provided by its distributors. BC636-6 Datasheet. NPN medium power transistors BC635; BC637; BC639 THERMAL CHARACTERISTICS Note 1. NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. EMITTERFEATURES High current transistors 2. bc635 bc637 bc639.4 0. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid … BC635 Transistor, BC635 Silicon NPN High Current Transistor, buy BC635 Transistor. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid … Download Product Compliance Certificate. EGP 1.0 … BC635 onsemi Transistors parts available at DigiKey. EMITTERFEATURES High current transistors 2. COLLECTOR 3. JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. 07-4 June 2007: EPCOS: B82479A1104M: 299Kb / 22P: 45 V, 1 A NPN medium power transistors NXP Semiconductors: BC54PA: 1Mb / 22P: 45 V, 1 A NPN medium power transistors Rev. 1219. BC635 Product details. BC636-10 Datasheet., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. Change Location.. Collector to Base Voltage: Vcbo = 45 Vdc 2. 1 A) • Low voltage (max. JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. NPN medium power transistors BC635; BC637; BC639 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. 80 V).pdf. This article mainly introduces Circuit, Pinout, Datasheet and other detailed information about ON Semiconductor BC637. COLLECTOR 3. Discrete Semiconductor Products | Single Bipolar Transistors. Mfr. Size:115K cdil bc635 bc636 bc637 bc638 bc639 bc640. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid … The BC635 is manufactured in a plastic TO-92 case. 5 months ago January 3, 2022 by Wajid Hussain.5 A IB Base Current 100 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Symbol Parameter Test Condition Min.. The complementary NPN transistor to the BC636 is the BC635. Integrated Circuits NPN medium power transistors 1999 Apr 23: BC635-16: 160Kb / 15P: 45 V, 1 A NPN medium power transistors Rev. This article mainly introduces Circuit, Pinout, Datasheet and other detailed information about ON Semiconductor BC637., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. NPN transistor in a TO-92; SOT54 plastic package. NPN transistor in a TO-92; SOT54 plastic package. COLLECTOR 3. Similar parts: BC337G, LP395, 2SC1213, 2SC1213A, 2SC2001, BC368-16, BC368-40, BC635-10, BC635-16, BC637. Quick reference data Symbol … BC635_BC640Rev_4 030196E TO-92 Leaded Plastic Package All Dimensions are in mm 5º Continental Device India Limited Data Sheet TO-92 Page 3 of 5 Plastic Package 2N5551 For Lead Free Parts, Device Part # will be Prefixed with "T" TO-92 Plastic Package SILICON PLANAR EPITAXIAL TRANSISTORS Base BC635, 637, 639 NPN BC636, 638, 640 PNP BC635_BC640Rev_5 180712E TO-92 Leaded Plastic Package All Dimensions are in mm 5º Continental Device India Limited Data Sheet TO-92 Page 3 of 5 Plastic Package 2N5551 For Lead Free Parts, Device Part # will be Prefixed with "T" TO-92 Plastic Package SILICON PLANAR EPITAXIAL TRANSISTORS Base BC635, 637, 639 NPN BC636, 638, 640 PNP BC639 Transistor Explained / Description: BC639 is an NPN BJT transistor packed with many good features in its small TO-92 size package. Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 The BC635 is manufactured in a plastic TO-92 case. Manufacturer: Motorola, Inc. Candy. All Transistors. 21 April 2022. • High current (max. 07-4 June 2007: BC635-16: 160Kb / 15P: 45 V, 1 A NPN medium power … NPN medium power transistors BC635; BC637; BC639 THERMAL CHARACTERISTICS Note 1. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. • Driver stages of audio/video amplifiers. 8-21 October 2011: BC635: 160Kb / 15P: 45 V, 1 A NPN medium power transistors Rev. C63516 = BC635 Transistor (45V, 1A) NPN quantity. ×. Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 ComSIT Distribution GmbH Jun 28, 2015 · Suppose I have this BC635 transistor, if I look at hFE then I'd say that the lowest value is 25 from that table in the Electrical Characteristics category, but if I look at the Figure 3. COLLECTOR 3.2 0 1 10 … JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. PNP complements: BC636, BC638 and BC640. All Transistors.pdf. JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. DESCRIPTION.8 W ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE … BC640-16 Transistor Datasheet pdf, BC640-16 Equivalent. was an American multinational telecommunications company that was founded in 1928., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1.pdf. View Details. 500 mA 45 V NPN Si SMALL SIGNAL TRANSISTOR TO-92. 80 V). PNP complement: BC636. Skip to Main Content., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1.